d mg1012uw document number: ds 31859 rev. 3 - 2 1 of 6 www.diodes.com september 2013 ? diode s incorporated dmg1012uw n - channel enhancement mode mosfet features ? low on - resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 2 kv ? totally lead - fre e & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot - 323 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram below ? terminals: finish ? matte tin annealed over alloy 42 leadframe. solderable per mil - std - 202, method 208 ? weight: 0.006 grams (approximate) ordering information (note 4) part number case packaging dmg1012uw - 7 sot - 323 3000 / tape & reel note s: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free " green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http : //www.diodes.com/products/packages.html markin g information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view source equivalent circuit gate protection diode gate drain top view g s d esd protected to 2kv na1 = product type marking code ym = date code marking for sat (shanghai assembly/ test site) y? m = date code marking for cat (chengdu assembly/ test site) y o r y? = year (ex: a = 20 13 ) m = month (ex: 9 = september) na1 y m chengdu a/t site shanghai a/t site e3
d mg1012uw document number: ds 31859 rev. 3 - 2 2 of 6 www.diodes.com september 2013 ? diode s incorporated dmg1012uw maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 20 v gate - source voltage v gss 6 v continuous drain current (note 5) steady state t a = + 25c t a = + 85 c i d 1.0 0.64 a pulsed drain current (note 6) i dm 6 a thermal ch aracteristics characteristic symbol max unit power dissipation (note 3 ) p d 0.29 w thermal resistance, junction to ambient @t a = + 25c (note 3) r ja 425 c/w operating and storage temperature range t j , t stg - 55 to +150 c notes: 5 . device moun ted on fr - 4 pcb, with minimum recommended pad layout. 6. repetitive rating, pulse width limited by junction temperature. electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max uni t test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 20 - - v v gs = 0v, i d = 250a zero gate voltage drain current t j = 25c i dss - - 100 na v ds = 20 v, v gs = 0v gate - source leakage i gss - - 1.0 a v gs = 4.5 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 0.5 - 1.0 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) - 0.3 0.45 ? v gs = 4.5v, i d = 600ma 0.4 0. 6 v gs = 2.5v, i d = 500ma 0.5 0.75 v gs = 1.8v, i d = 350ma forward transfer admittance |y fs | - 1.4 - s v ds = 10 v, i d = 400ma diode forward voltage v sd - 0.7 1.2 v v gs = 0v, i s = 150ma dynamic characteristics (note 8 ) input capacitance c iss - 60.67 - pf v ds = 16 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 9.68 - pf reverse transfer capacitance c rss - 5.37 - pf total gate charge q g - 736.6 - pc v gs = 4.5 v, v ds = 10 v, i d = 250m a gate - source charge q gs - 93.6 - pc gate - drain charge q gd - 116.6 - pc turn - on delay time t d(on) - 5.1 - ns v dd = 10 v, v gs = 4.5 v, r l = 47 , r g = 10 , i d = 200ma turn - on rise time t r - 7.4 - ns turn - off delay time t d(off) - 26.7 - ns turn - off fall time t f - 12.3 - ns notes: 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subj ect to production testing.
d mg1012uw document number: ds 31859 rev. 3 - 2 3 of 6 www.diodes.com september 2013 ? diode s incorporated dmg1012uw 0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 fig. 1 typical output characteristics v , drain-source voltage (v) ds i , d r a i n c u r r e n t (a) d v = 1.2v gs v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 4.5v gs v = 8.0v gs 0 0.3 0.6 0.9 1.2 1.5 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristics v , gate source voltage (v) gs i , d r ai n c u r r e n t (a) d v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.3 0.6 0.9 1.2 1.5 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , d r ai n -s o u r c e o n -r esi st a n c e ( ) d s ( o n ) ? v = 1.8v gs v = 4.5v gs v = 2.5v gs 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.3 0.6 0.9 1.2 1.5 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r ai n - so u r c e o n - r esi s t an c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , d r ai n -s o u r c e o n -r esi st an c e (n o r m al i z ed ) d s ( o n ) v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d 0 0.2 0.4 0.6 0.8 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , d r ai n -s o u r c e o n -r esi st a n c e ( ) d s ( o n ) ? v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d
d mg1012uw document number: ds 31859 rev. 3 - 2 4 of 6 www.diodes.com september 2013 ? diode s incorporated dmg1012uw 0 0.4 0.8 1.2 1.6 v , g a t e t h r es h o l d vo l t ag e (v ) g s ( t h ) fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a i = 250a d 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current 0 2 4 6 8 10 i , so u r c e c u r r e n t (a) s t = 25c a 1 10 100 0 5 10 15 20 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c ap ac i t an c e ( p f ) c iss c oss c rss 1 10 100 1,000 0 4 8 12 16 20 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds i , d r ai n -s o u r c e l eaka g e c u r r e n t (n a ) d s s t = 25c a t = 85c a t = 125c a t = 150c a fig. 11 transient thermal response t , pulse duration time (s) 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 0.001 0.01 0.1 1 r( t ), t r a n si en t t h e r m a l r e si st an c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 r (t) = r(t) * ja r r = 486c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.1
d mg1012uw document number: ds 31859 rev. 3 - 2 5 of 6 www.diodes.com september 2013 ? diode s incorporated dmg1012uw package outline dimensions suggested pad layout sot - 323 dim min max typ a 0.25 0.40 0.30 b 1.15 1.35 1.30 c 2.00 2.20 2.10 d - - 0.65 g 1.20 1.40 1.30 h 1.80 2.20 2.15 j 0.0 0.10 0.05 k 0.90 1.00 0.95 l 0.25 0. 40 0.30 m 0.10 0.18 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 2.8 x 0.7 y 0.9 c 1.9 e 1.0 a m j l d b c h k g x e y c z
d mg1012uw document number: ds 31859 rev. 3 - 2 6 of 6 www.diodes.com september 2013 ? diode s incorporated dmg1012uw important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitnes s for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to t his document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are rep resented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diod es incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinati ve format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructi ons for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause t he failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agr ee that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or sy stems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 3 , diodes incorporated www.diodes.com
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